📚 Volume 29, Issue 11 📋 ID: aNZXi81

Authors

Antoine Bianchi , Ivan Hernández, Feng Melnyk, Franz Roux

Department of Computer Engineering, Behbahan Branch, Islamic Azad University Behbahan, Iran

Abstract

This paper draws upon De Morgan’s laws to suggest a simple design with high polarity and reduced number of cells for the NAND, NOR, and XOR complete gates on the quantum dot cellular automata (QCA). NAND and NOR complete gates are the fundamental basic gates to design all the digital systems. Different combinational and sequential circuits have been designed in the previous research which have utilized AND and OR common models and NAND and NOR complete gates. If an optimum model can be designed and proposed for these gates, it can be definitely predicted that with these gates, designing other circuits will be more simple and optimal. One of the other most applicable complete and efficient gates in digital systems and network is the XOR gate. In this paper, a model of simple design has been suggested for the XOR gate without employing multilayer with the appropriate delay. The proposed designs have been simulated with QCADesigner software. The results of simulating gates have been more appropriate in comparison to the previous research.
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📝 How to Cite

Antoine Bianchi , Ivan Hernández, Feng Melnyk, Franz Roux (2022). "An Optimum Model for the Digital Complete Gates in QCA". Wulfenia, 29(11).